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Gallium Nitride (GaN): Physics, Devices, and Technology

Gallium Nitride (GaN): Physics, Devices, and Technology

Autorzy
Wydawnictwo Apple Academic Press Inc.
Data wydania 16/10/2015
Liczba stron 388
Forma publikacji książka w twardej oprawie
Poziom zaawansowania Literatura popularna
Język angielski
ISBN 9781482220032
Kategorie Elektryka, elektromagnetyzm i magnetyzm
1 203.30 PLN (z VAT)
$270.68 / €257.99 / £223.96 /
Produkt na zamówienie
Dostawa 5-6 tygodni
Ilość
Do schowka

Opis książki

Addresses a Growing Need for High-Power and High-Frequency Transistors





Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors.





Explores Recent Progress in High-Frequency GaN Technology





Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends.





In addition, the authors:











Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects
Examine GaN technology while in its early stages of high-volume deployment in commercial and military products
Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology
Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers








A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.

Gallium Nitride (GaN): Physics, Devices, and Technology

Spis treści

GaN High-Voltage Power Devices

Joachim Wurfl

AlGaN/GaN High-Electron-Mobility Transistors Grown by Ammonia Source Molecular Beam Epitaxy

Yvon Cordier

Gallium Nitride Transistors on Large-Diameter Si (111) Substrate

Subramaniam Arulkumaran and Geok Ing Ng

GaN-HEMT Scaling Technologies for High-Frequency RF and Mixed Signal Applications

Keisuke Shinohara

Group III-Nitride Microwave Monolithically Integrated Circuits

Rudiger Quay

GaN-Based Metal/Insulator/Semiconductor-Type Schottky Hydrogen Sensors

Ching-Ting Lee, Hsin-Ying Lee and Li-Ren Lou

InGaN-Based Solar Cells

Ezgi Dogmus and Farid Medjdoub

III-Nitride Semiconductors: New Infrared Intersubband Technologies

M Beeler and E Monroy

Gallium Nitride-Based Interband Tunnel Junctions

Siddharth Rajan, Sriram Krishnamoorthy and Fatih Akyol

Trapping and Degradation Mechanisms in GaN-Based HEMTs

Matteo Meneghini, Gaudenzio Meneghesso and Enrico Zanoni

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