Wydawnictwo | Springer, Berlin |
Data wydania | |
Liczba stron | 330 |
Forma publikacji | książka w twardej oprawie |
Język | angielski |
ISBN | 9783319690520 |
Kategorie |
Phase Change Memory: Device Physics, Reliability and Applications
Chapter 1. Memory overview and PCM introduction.- Chapter 2.Electrical transport in crystalline and amorphous chalcogenides.- Chapter 3.Thermal model and remarkable temperature effects on calcogenide alloys.- Chapter 4.Self-consistent numerical model.- Chapter 5.PCM main reliability features.- Chapter 6.Structure and properties of chalcogenide materials for PCM.- Chapter 7.Material Engineering for PCM Device Optimization.- Chapter 8.PCM scaling.- Chapter 9.PCM device design.- Chapter 10.PCM array architecture and management.- Chapter 11. PCM applications and an outlook to the future.