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Nanoscale Transistors: Device Physics, Modeling and Simulation

Nanoscale Transistors: Device Physics, Modeling and Simulation

Autorzy
Wydawnictwo Springer, Berlin
Data wydania
Liczba stron 218
Forma publikacji książka w miękkiej oprawie
Język angielski
ISBN 9781441939159
Kategorie Inżynieria elektroniczna
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Opis książki

To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules

Nanoscale Transistors: Device Physics, Modeling and Simulation

Spis treści

Basic Concepts.- Devices, Circuits, and Systems.- The Ballistic Nanotransistor.- Scattering Theory of the MOSFET.- Nanowire Field-Effect Transistors.- Transistors at the Molecular Scale.

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