ABE-IPSABE HOLDINGABE BOOKS
English Polski
Dostęp on-line

Książki

0.00 PLN
Schowek (0) 
Schowek jest pusty
Device Physics, Modeling, Technology, and Analysis for Silicon MESFET

Device Physics, Modeling, Technology, and Analysis for Silicon MESFET

Autorzy
Wydawnictwo Springer, Berlin
Data wydania
Liczba stron 122
Forma publikacji książka w twardej oprawie
Język angielski
ISBN 9783030045128
Kategorie Obwody i komponenty
Zapytaj o ten produkt
E-mail
Pytanie
 
Do schowka

Opis książki

This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device.  The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.

Device Physics, Modeling, Technology, and Analysis for Silicon MESFET

Spis treści

Chapter 1. Invention and Evaluation of Transistors and Integrated Circuits.- Chapter 2. General overview of the basic structure and operation of a typical silicon on insulator metal-semiconductor field effect transistor SOI-MESFET .- Chapter 3. Modeling of Classical SOI-MESFET.- Chapter 4. Design and modeling of triple-material gate SOI-MESFET.- Chapter 5. Three-dimensional analytical model of the non-classical three-gate SOI-MESFET .- Chapter 6. Analytical investigation of subthreshold performance of SOI-MESFET devices.- Chapter 7. Future works on Silicon-on-insulator metal semiconductor field effect transistors (SOI-MESFETs).

Polecamy również książki

Strony www Białystok Warszawa
801 777 223