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Crystal Growth Technology: Semiconductors and Dielectrics. Vorwort: Scheel, Hans J.

PrefacePART I: Basic Concepts in Crystal Growth TechnologyTHERMODYNAMIC MODELING OF CRYSTAL-GROWTH PROCESSESIntroductionGeneral Approach of Thermodynamic ModelingCrystal Growth in the System Si-C-O-Ar (Example 1)Crystal Growth of Carbon-Doped GaAs (Example 2)Summary and ConclusionsMODELING OF VAPOR-PHASE GROWTH OF SiC AND AlN BULK CRYSTALSIntroductionModel DescriptionResults and DiscussionsConclusionsADVANCED TECHNOLOGIES OF CRYSTAL GROWTH FROM MELT USING VIBRATIONAL INFLUENCEIntroductionAxial Vibrational Control in Crystal GrowthAVC-Assisted Czochralski MethodAVC-Assisted Bridgman MethodAVC-Assisted Floating Zone MethodConclusionsPART II: SemiconductorsNUMERICAL ANALYSIS OF SELECTED PROCESSES IN DIRECTIONAL SOLIDIFICATION OF SILICON FOR PHOTOVOLTAICSIntroductionDirectional Solidification MethodCrystallization ProcessImpurity Incorporation in CrystalsSummaryCHARACTERIZATION AND CONTROL OF DEFECTS IN VCz GaAs CRYSTALS GROWN WITHOUT B2O3 ENCAPSULANTIntroductionRetrospectionCrystal Growth Without B2O3 EncapsulantInclusions, Precipitates and DislocationsResidual Impurities and Special Defect StudiesElectrical and Optical Properties in SI GaAsBoron in SC GaAsOutlook on TMF-VCzConclusionsTHE GROWTH OF SEMICONDUCTOR CRYSTALS (Ge, GaAs) BY THE COMBINED HEATER MAGNET TECHNOLOGYIntroductionSelected FundamentsalsTMF Generation in Heater-Magnet ModulesThe HMM DesignNumerical MeasurementsGrowth Results under TMFConclusions and OutlookMANUFACTURING OF BULK AlN SUBSTRATESIntroductionModelingExperimentResults and DiscussionConclusionsINTERACTIONS OF DISLOCATIONS DURING EPITAXIAL GROWTH OF SiC AND GaNIntroductionClassification, Nomenclature and Characterization of Dislocations in SiC and GaNConversion of Basal Plane Dislocations During SiC EpitaxyReduction of Dislocations During Homoepitaxy of GaNConclusionsLOW-TEMPERATURE GROWTH OF TERNARY III-V SEMICONDUCTOR CRYSTALS FROM ANTIMONIDE-BASED QUATERNARY MELTSIntroductionCrystal Growth from Quaternary MeltsSynthesis and Bulk Crystal GrowthConclusionMERCURY CADMIUM TELLURIDE (MCT) GROWTH TECHNOLOGY USING ACRT AND LPEIntroductionBridgman/ACRT Growth of MCTLiquid Phase Epitaxy of MCTTHE USE OF A PLATINUM TUBE AS AN AMPOULE SUPPORT IN THE BRIDGMAN GROWTH OF BULK CZT CRYSTALSIntroductionThe Importance of the Solid/Liquid InterfaceApproaches for Crystal Growth Using Ampoule SupportResults and DiscussionsConclusionsPART III: DielectricsMODELING AND OPTIMIZATION OF OXIDE CRYSTAL GROWTHIntroductionRadiative Heat Transfer (RHT)Numerical ModelResults and DiscussionConclusionsADVANCED MATERIAL DEVELOPMENT FOR INERTIAL FUSION ENERGY (IFE)IntroductionProduction of Nd:Phosphate Laser Glass and KDP Frequency-Conversion CrystalsYb:S-FAP CrystalsYCOB CrystalsAdvanced Material Concepts for Power-Plant DesignsSummaryMAGNETO-OPTIC GARNET SENSOR FILMS: PREPARATION, CHARACTERIZATION, APPLICATIONIntroductionBi-Substituted GarnetsLPE Deposition and Topological Film PropertiesApplicationsConclusionsGROWTH TECHNOLOGY AND LASER PROPERTIES OF Yb-DOPED SESQUIOXIDESIntroductionStructure and Physical PropertiesCrystal GrowthSpectroscopic CharacterizationLaser ExperimentsSummary and OutlookCONTINUOUS GROWTH OF ALKALI-HALIDES: PHYSICS AND TECHNOLOGYModern Requirements to Large Alkali-Halide CrystalsConditions of Steady-State Crystallization in Conventional Melt-Growth Methods and in Their ModificationsMacrodefect Formation in AHCDynamics of Thermal Conditions during Continuous GrowthAdvanced Growth-Control AlgorithmsSummaryTRENDS IN SCINTILLATION CRYSTALSIntroductionNovel Scintillation MaterialsScintillation Detectors for Image Visualization and Growth Techniques for Scintillation CrystalsHigh Spatial Resolution Scintillation DetectorsConclusionsPART IV: Crystal MachiningCRYSTAL MACHINING USING ATMOSPHERIC PRESSURE PLASMAIntroductionPlasma Chemical Vaporization Machining (PCVM)Numerically Controlled Sacrificial OxidationConclusions