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Rare-Earth Implanted MOS Devices for Silicon Photonics: Microstructural, Electrical and Optoelectronic Properties

Rare-Earth Implanted MOS Devices for Silicon Photonics: Microstructural, Electrical and Optoelectronic Properties

Autorzy
Wydawnictwo Springer, Berlin
Data wydania
Liczba stron 174
Forma publikacji książka w miękkiej oprawie
Język angielski
ISBN 9783642265587
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Opis książki

The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications. It describes the structural formation processes in the gate oxide during fabrication and under operation, how this microstructure development will affect the electrical device performance and how both microstructure and electrical characteristics determine the optoelectronic features of the light emitters. However, most of the discussed physical processes as well as the described fabrication methods and device characterization techniques are of general interest and are beyond the scope of this type of light emitter. The book will be of value to engineers, physicists, and scientists dealing either with Si based photonics in particular or optoelectronic device fabrication and characterization in general.

Rare-Earth Implanted MOS Devices for Silicon Photonics: Microstructural, Electrical and Optoelectronic Properties

Spis treści

Introduction.- Si-based Light Emitters.- Microstructure.- Electrical Properties.- Electroluminescence Spectra.- Electroluminescence Efficiency.- Stability and Degradation.- Applications.

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