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Solid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics. The operational stabilities of such TFTs are thus important, strongly depending on the nature and density of charge traps present at the channel/dielectric interface or in the thin-film channel itself.

This book contains how to characterize these traps, starting from the device physics of field-effect transistor (FET). Unlike conventional analysis techniques which are away from well-resolving spectral results, newly-introduced photo-excited charge-collection spectroscopy (PECCS) utilizes the photo-induced threshold voltage response from any type of working transistor devices with organic-, inorganic-, and even nano-channels, directly probing on the traps. So, our technique PECCS has been discussed through more than ten refereed-journal papers in the fields of device electronics, applied physics, applied chemistry, nano-devices and materials science, finally finding a need to be summarized with several chapters in a short book. Device physics and instrumentations of PECCS are well addressed respectively, in the first and second chapters, for the next chapters addressing real applications to organic, oxide, and nanostructured FETs. This book would provide benefits since its contents are not only educational and basic principle-supportive but also applicable and in-house operational.

Photo-Excited Charge Collection Spectroscopy: Probing the traps in field-effect transistors

Chapter 1. Device Stability and Photo-Excited Charge-Collection Spectroscopy.
1.1. Thin-film transistor architectures for photon probe measurements.
1.2. Device physics and equations for thin-film transistors.
1.3. Stability issues: Hysteresis by Gate Voltage Sweep.
1.4. Stability issues: Bias-Temperature-Stress.
1.5. Stability issues: Photostability.
1.6. Stability issues: Back Channel Current.
1.7. Importance of dielectric/channel interface trap states.
1.8. Previous Interface Trap measurements.
1.9. Photo-Excited Charge-Collection Spectroscopy (PECCS).
1.10. Chapter summary.
Reference.

Chapter 2. Instrumentations for PECCS.
2.1. Introduction of PECCS measurements system.
2.2. Optical System for PECCS measurement.
2.3. Electrical measurement.
2.4. Data processing and analysis for DOS profile.
Reference.

Chapter 3. PECCS measurements in Organic FETs.
3.1. PECCS on small molecule-based p-channel FETs.
3.2. PECCS on small molecule-based n-channel FETs.
3.3. PECCS on polymer-based FETs.
3.4. Chapter summary.
Reference.

Chapter 4. PECCS measurements in Oxide FETs.
4.1. PECCS on ZnO based n-channel FETs.
4.2. PECCS on amorphous InGaZnO based n-channel FETs.
4.3. PECCS by Current-Voltage vs. Capacitance-Voltage method on amorphous Si and amorphous InGaZnOTFTs.
4.4. PECCS to observe interface- and bulk-originated trap densities in amorphous InGaZnOTFTs.
4.5. Chapter summary.
Reference.

Chapter 5. PECCS measurements in Nanostructure FETs.
5.1. PECCS on ZnO nanowire-based n-channel FETs.
5.2. PECCS measurements for the thickness-modulated bandgap of MoS2 nanosheets.
5.3. Chapter summary.
Reference

Chapter 6. Summary and limiting factors of PECCS.