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Nanoliquid Processes for Electronic Devices

Nanoliquid Processes for Electronic Devices

Publisher Springer Nature Customer Service Center GmbH
Year 01/02/2019
Edition First
Pages 590
Version hardback
Readership level Professional and scholarly
Language English
ISBN 9789811329524
Categories Physical chemistry, Materials science, Production engineering, Semi-conductors & super-conductors
$217.64 (with VAT)
843.00 PLN / €183.75 / £166.06
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Book description

This book summarizes the results of the research on how to make small electronic devices with high properties by using simple liquid processes such as coating, self-assembling and printing, especially focusing on devices composed of silicon and oxide materials. It describes syntheses and analyses of solution materials, formations of solid thin films from solutions, newly developed patterning methods to make devices, and characterization of the developed devices. In the first part of the book, the research on liquid silicon (Si) materials is described. Because the use of a liquid material is a quite new idea for Si devices, this book is the first one to describe liquid Si materials for electronic devices. Si devices as typified by MOS-FET have been produced by using solid and gas materials. This volume precisely describes a series of processes from material synthesis to device fabrication for those who are interested and are/will be engaged in liquid Si-related work. In the latter part of the book, a general method of how to make good oxide films from solutions and a new imprinting method to make nanosized patterns are introduced. For making oxide films with high quality, the designing of the solution is crucial. If a solution is designed properly, a gel material called "cluster gel" can be formed which is able to be imprinted to form nanosized patterns. The anticipated readers of this book are researchers, engineers, and students who are interested in solution and printing processes for making devices. More generally, this book will also provide guidelines for corporate managers and executives who are responsible for making strategies for future manufacturing processes.

Nanoliquid Processes for Electronic Devices

Table of contents

Part I Introduction to liquid process

Chapter 1. Liquid process

1-1 Liquid and its formability

1-2 Categories of liquid process

1-2-1 First step: Conversion way from liquid to solid

1-2-2 Second step: Direct forming process

Part II Silicon-based materials

Chapter 2. Guide to silicon-based materials

Chapter 3. Liquid silicon

3-1 CPS

3-1-1 Hydrosilanes and CPS

3-1-2 Structures of a CPS molecule

3-1-3 Electronic structure of isolated CPS molecule

3-1-4 Interaction between CPS molecules

3-2 Silicon ink

3-2-1 Silicon ink from CPS

3-2-2 Polymer structure in silicon ink

3-3-3 Doped silicon inks

Chapter 4. Thin film formation by coating

4-1 Coating process and molecular forces

4-2 The origin of molecular forces

4-2-1 Theory of van der Waals free energy

4-2-2 Measurement of refractive index n

4-2-3 Molecular forces of CPS and silicon compounds

4-3 Coating of Si ink

4-3-1 General remarks on Si ink coating

4-3-2 Observations of liquid films

4-3-3 Hamaker constant and coating property

4-4 Conversion from polysilane to amorphous Si by pyrolysis

4-4-1 Film appearance during pyrolysis and TG/DTA analysis of Si ink

4-4-2 Raman scattering analysis

4-4-3 FT-IR and SIMS analyses

4-4-4 Properties of amorphous films

Chapter 5. Liquid vapor deposition using liquid silicon (LVD)

5-1 Formation of i, n and p type silicon film by LVD

5-1-1 LVD method and experiment

5-1-2 CPS deposition process

5-1-3 Film properties

5-1-4 Conclusion

5-2 High-quality amorphous silicon film with LVD

5-2-1 New equipment for LVD

5-2-2 Film quality with processing temperature

5-2-3 Film quality with CPS supply speed

5-2-4 Electronic properties of a-Si:H films

5-2-5 Oxygen contamination in a-Si:H film

5-2-6 Summary

Chapter 6. Liquid silicon family materials (1)

-- SiO2, CoSi2 and Al from liquid Si --

6-1 SiO2 fabrication from liquid silicon

6-1-1 Forming SiO2 films from liquid silicon material

6-1-2 The sole solution-processed SiO2 film for TFTs

6-1-3 Multi use of solution-processed SiO2 films for TFTs

6-1-4 Conclusion

6-2 CoSi2 fabrication from liquid silicon

6-2-1 Metal silicide from solution

6-2-2 Synthesis of cobalt silicide ink

6-2-3 Formation of CoSi2 films

6-2-4 TEM observation

6-2-5 Comparison of this process with the conventional ones

6-2-6 More detailed analyses

6-2-7 Conclusions

6-3 Al fabricatio

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